Multiple Polarization States in Hf 1- x Zr x O 2 Thin Films by Ferroelectric and Antiferroelectric Coupling.

Autor: Zeng B; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China., Yin L; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China., Liu R; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China., Ju C; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China., Zhang Q; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China., Yang Z; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China., Zheng S; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China., Peng Q; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China., Yang Q; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China., Zhou Y; Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China., Liao M; Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan, 411105, China.; Shaanxi Key Laboratory of High-Orbits-Electron Materials and Protection Technology for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, China.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Dec 23, pp. e2411463. Date of Electronic Publication: 2024 Dec 23.
DOI: 10.1002/adma.202411463
Abstrakt: HfO 2 -based multi-bit ferroelectric memory combines non-volatility, speed, and energy efficiency, rendering it a promising technology for massive data storage and processing. However, some challenges remain, notably polarization variation, high operation voltage, and poor endurance performance. Here we show Hf 1- x Zr x O 2 (x = 0.65 to 0.75) thin films grown through sequential atomic layer deposition (ALD) of HfO 2 and ZrO 2 exhibiting three-step domain switching characteristic in the form of triple-peak coercive electric field (E C ) distribution. This long-sought behavior shows nearly no changes even at up to 125 °C and after 1 × 10 8 electric field cycling. By combining the electrical characterizations and integrated differential phase-contrast scanning transmission electron microscopy (iDPC-STEM), we reveal that the triple-peak E C distribution is driven by the coupling of ferroelectric switching and reversible antiferroelectric-ferroelectric transition. We further demonstrate the 3-bit per cell operation of the Hf 1- x Zr x O 2 capacitors with excellent device-to-device variation and long data retention, by the full switching of individual peaks in the triple-peak E C . The work represents a significant step in implementing reliable non-volatile multi-state ferroelectric devices.
(© 2024 Wiley‐VCH GmbH.)
Databáze: MEDLINE
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