Single-Step Deposition of Chalcopyrite (CuFeS 2 ) Thin Films.

Autor: Severiano Sobrinho VDS; Materials Science and Engineering Post-Graduation - Federal University of Campina Grande (UFCG), Campina Grande 58429-900, PB, Brazil., Costa THC; Mechanical Engineering Post-Graduation - Federal University of Rio Grande do Norte (UFRN), Natal 59078-970, RN, Brazil., Feitor MC; Mechanical Engineering Post-Graduation - Federal University of Rio Grande do Norte (UFRN), Natal 59078-970, RN, Brazil., Santana Libório M; Science and Technology School - Federal University of Rio Grande do Norte (UFRN), Natal 59078-970, RN, Brazil., Magalhães de Sousa RR; Mechanical Department - Federal University of Piauí (UFPI), Teresina 64049-550, PI, Brazil., Linhares ÁADS; Mechanical Engineering Post-Graduation - Federal University of Rio Grande do Norte (UFRN), Natal 59078-970, RN, Brazil., Vieira PS; Materials Science and Engineering Post-Graduation - Federal University of Rio Grande do Norte (UFRN), Natal 59078-970, RN, Brazil., Lima LLF; Materials Science and Engineering Post-Graduation - Federal University of Rio Grande do Norte (UFRN), Natal 59078-970, RN, Brazil., Luz Lima CD; Physic Post-Graduation - Federal University of Piauí (UFPI), Teresina 64049-550, PI, Brazil., Araújo EM; Materials Science and Engineering Post-Graduation - Federal University of Campina Grande (UFCG), Campina Grande 58429-900, PB, Brazil.
Jazyk: angličtina
Zdroj: ACS omega [ACS Omega] 2024 Dec 04; Vol. 9 (50), pp. 49849-49856. Date of Electronic Publication: 2024 Dec 04 (Print Publication: 2024).
DOI: 10.1021/acsomega.4c08647
Abstrakt: Thin films of chalcopyrite, CuFeS 2 , are promising candidates for use as absorber layers in photovoltaic cells due to their low band gap and high absorbance. These films are typically deposited in two or three steps, always involving an annealing process. In this work, the CuFeS 2 film was deposited on a glass substrate in a single deposition step using the cathodic cylindrical plasma deposition (CCyPD) technique. The film samples deposited were analyzed by X-ray diffraction (XRD) and Raman spectroscopy, the film thickness was measured using the optical method, and FEG-SEM analyzed the surface structural morphology. The results showed a strong dependence on the deposition temperature for phase formation, with chalcopyrite being obtained for films deposited at 600 °C. At this temperature, a uniformly distributed film with uniform grain sizes was obtained, and the experimentally obtained band gap values of the films were consistent with the theoretical values reported in the literature, demonstrating the technique's effectiveness and precision in producing high-quality films.
Competing Interests: The authors declare no competing financial interest.
(© 2024 The Authors. Published by American Chemical Society.)
Databáze: MEDLINE
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