Fabrication and performance enhancement of an In 2 O 3 /BiVO 4 heterojunction for N -butanol gas sensing applications.

Autor: Li XB; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Sun S; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Hu X; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Zhang QQ; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Gao C; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Zhou H; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Wu BX; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Wang AQ; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Hu WY; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Wang YJ; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Yang LX; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Yang B; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Li WK; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn., Xu HH; Engineering Research Center of Integrated Circuit Packaging and Testing, Ministry of Education, Department of Physics, Tianshui Normal University Tianshui Gansu 741001 China lixiangbing@tsnu.edu.cn.
Jazyk: angličtina
Zdroj: RSC advances [RSC Adv] 2024 Dec 17; Vol. 14 (53), pp. 39715-39726. Date of Electronic Publication: 2024 Dec 17 (Print Publication: 2024).
DOI: 10.1039/d4ra04949g
Abstrakt: Butanol, a highly toxic volatile organic compound, poses significant health risks. Consequently, the creation of efficient gas-sensitive materials for butanol detection holds substantial practical significance. This study employed a secondary hydrothermal technique to synthesize In 2 O 3 , BiVO 4 , and their composite In 2 O 3 /BiVO 4 . Notably, the In 2 O 3 /BiVO 4 composite exhibited a threefold enhanced response, short desorption time and low operating temperature compared to pure BiVO 4 . Moreover, the composite demonstrated improved selectivity, certain moisture-proof performance, and prolonged stability. The synthesis strategy, which entailed growing microspherical In 2 O 3 on BiVO 4 , led to structural modifications, enhanced surface area, increased oxygen adsorption capacity, an enlarged optical bandgap, and improved anti-interference ability of the device. As a result, the formation of an n-n heterojunction between In 2 O 3 and BiVO 4 in the composite material translates into an outstanding butanol sensing device.
Competing Interests: There are no conflicts to declare.
(This journal is © The Royal Society of Chemistry.)
Databáze: MEDLINE
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