Probing Electronic Doping in CVD Graphene Crystals Treated by HNO 3 Vapors.

Autor: Delikoukos N; Institute of Chemical Engineering Sciences, Foundation of Research and Technology-Hellas (FORTH/ICE-HT), Stadiou Street, Platani, Patras 26504, Greece.; Department of Physics, University of Patras, Patras 26504, Greece., Katsiaounis S; Institute of Chemical Engineering Sciences, Foundation of Research and Technology-Hellas (FORTH/ICE-HT), Stadiou Street, Platani, Patras 26504, Greece., Parthenios J; Institute of Chemical Engineering Sciences, Foundation of Research and Technology-Hellas (FORTH/ICE-HT), Stadiou Street, Platani, Patras 26504, Greece., Sygellou L; Institute of Chemical Engineering Sciences, Foundation of Research and Technology-Hellas (FORTH/ICE-HT), Stadiou Street, Platani, Patras 26504, Greece., Tasis D; Department of Chemistry, University of Ioannina, Ioannina 45110, Greece.; University Research Center of Ioannina (URCI), Institute of Materials Science and Computing, Ioannina 45110, Greece., Papagelis K; Institute of Chemical Engineering Sciences, Foundation of Research and Technology-Hellas (FORTH/ICE-HT), Stadiou Street, Platani, Patras 26504, Greece.; School of Physics, Department of Solid-State Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece.
Jazyk: angličtina
Zdroj: ACS omega [ACS Omega] 2024 Nov 22; Vol. 9 (49), pp. 48246-48255. Date of Electronic Publication: 2024 Nov 22 (Print Publication: 2024).
DOI: 10.1021/acsomega.4c05697
Abstrakt: In this work, we present a comprehensive protocol for achieving hole doping in graphene through exposure to nitric acid (HNO 3 ) vapors. We demonstrate gradual p-type surface doping of CVD-grown graphene on a Si/SiO 2 substrate by thermally depositing nitric acid molecules to form self-assembled charge transfer complexes. Detailed analysis of charge carrier concentration and Fermi energy shifts was conducted using Raman, X-ray and ultraviolet photoelectron spectroscopies (XPS/UPS). Our methodology, including a novel PMMA coating step, ensures stability and efficiency of the doping process, highlighting its effectiveness in inducing permanent hole doping while maintaining the structural integrity of the graphene.
Competing Interests: The authors declare no competing financial interest.
(© 2024 The Authors. Published by American Chemical Society.)
Databáze: MEDLINE
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