Ferroelastic Domain Switching and Time-Resolved Negative Capacitance in Polar-Axis-Oriented Hf 0.5 Zr 0.5 O 2 Grown by Atomic Layer Epitaxy.

Autor: Jiang YS; Department of Materials Science and Engineering, National Taiwan University, Taipei, 106319, Taiwan., Lin WE; Graduate School of Advanced Technology, National Taiwan University, Taipei, 106319, Taiwan., Shiojiri M; Kyoto Institute of Technology, Kyoto, 606-8585, Japan., Yin YT; Department of Materials Science and Engineering, National Taiwan University, Taipei, 106319, Taiwan., Su YC; Taiwan Semiconductor Manufacturing Company, Hsinchu, 300096, Taiwan., Nien CH; Taiwan Semiconductor Manufacturing Company, Hsinchu, 300096, Taiwan., Hsu CF; Taiwan Semiconductor Manufacturing Company, Hsinchu, 300096, Taiwan., Hou VD; Taiwan Semiconductor Manufacturing Company, Hsinchu, 300096, Taiwan., Chang CS; Taiwan Semiconductor Manufacturing Company, Hsinchu, 300096, Taiwan., Radu I; Taiwan Semiconductor Manufacturing Company, Hsinchu, 300096, Taiwan., Chen MJ; Department of Materials Science and Engineering, National Taiwan University, Taipei, 106319, Taiwan.; Graduate School of Advanced Technology, National Taiwan University, Taipei, 106319, Taiwan.; Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 106319, Taiwan.
Jazyk: angličtina
Zdroj: Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Dec 15, pp. e2408278. Date of Electronic Publication: 2024 Dec 15.
DOI: 10.1002/smll.202408278
Abstrakt: Ferroelectric properties of Hf 0.5 Zr 0.5 O 2 are strongly correlated with its crystallographic orientation, with the [001] direction serving as the polar axis. However, the epitaxial growth of highly polar-axis-oriented Hf 0.5 Zr 0.5 O 2 layers with pronounced ferroelectricity is rarely reported. Here epitaxial (001)-oriented Hf 0.5 Zr 0.5 O 2 thin films grown by atomic layer epitaxy (ALE) is demonstrated, which achieve a state-of-the-art ferroelectric polarization up to 78.9 µC cm -2 . The epitaxial Hf 0.5 Zr 0.5 O 2 layer experiences a lattice reorientation from (010) to (001) during the wake-up process, as evidenced by plane-view precession electron diffraction. Accordingly, a two-step, 90° ferroelastic domain switching model is proposed to elucidate multiple polarization switching. Furthermore, the observed polarization switching dynamics closely match with the time-resolved negative capacitance, which is quantified as an equivalent high dielectric constant of -170. This study highlights the capability of ALE to precisely control the crystallographic orientation of Hf 0.5 Zr 0.5 O 2 thin films, providing deep insights into fundamental ferroelectric mechanisms.
(© 2024 Wiley‐VCH GmbH.)
Databáze: MEDLINE
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