Indium aluminum nitride: A review on growth, properties, and applications in photovoltaic solar cells.
| Autor: | Cañón-Bermúdez JD; Departamento de Física y Química, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia Sede Manizales, Carrera 27 # 64-60, Manizales, 176007, Colombia.; Escuela de Ciencias Básicas, Tecnologías e Ingenierías, Universidad Nacional Abierta y a Distancia UNAD, Diagonal 25 F Carrera 23, Dosquebradas, 661001, Colombia., Mulcué-Nieto LF; Departamento de Física y Química, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia Sede Manizales, Carrera 27 # 64-60, Manizales, 176007, Colombia.; Departamento de Física y Matemática, Universidad Autónoma de Manizales, Antigua Estación del Ferrocarril Manizales, Caldas, 170002, Colombia. |
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| Jazyk: | angličtina |
| Zdroj: | Heliyon [Heliyon] 2024 Nov 14; Vol. 10 (22), pp. e40322. Date of Electronic Publication: 2024 Nov 14 (Print Publication: 2024). |
| DOI: | 10.1016/j.heliyon.2024.e40322 |
| Abstrakt: | InAlN semiconductor alloy is a promising option for the fabrication of optoelectronic devices, such as high efficiency solar cells, due to its wide variable bandgap, from 0.64 eV to 6.2 eV. Traditionally, the production of high quality InAlN has been achieved by techniques such as MBE (Molecular Beam Epitaxy) and MOCVD (Chemical Vapor Deposition), which are complex and require high energy consumption. In contrast, sputtering is presented as a simpler, cheaper, and more industrially scalable technique, allowing the production of InAlN thin films with good structural quality. This study investigates the physical properties of InAlN layers to evaluate their potential in photovoltaic applications. Recent advances and challenges in the use of InAlN as an absorber layer in solar cells are discussed. In addition, critical parameters of the sputtering process, including target power, working pressure, gas flow ratio, substrate temperature, source type and number of cathodes and their influence on material properties are explored. These conditions are discussed along with their impact on the quality of InAlN thin films to enhance their application in photovoltaics and other emerging technology areas. Competing Interests: The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper. (© 2024 Published by Elsevier Ltd.) |
| Databáze: | MEDLINE |
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