Multilevel Resistive Switching Dynamics by Controlling Phase and Self-Assembled Nanochannels in HfO 2 .

Autor: Parida T; Department of Physics, School of Natural Sciences, Shiv Nadar Institution of Eminence, Gautam Buddha Nagar, Uttar Pradesh, 201314, India., Luong MA; CEMES-CNRS and Universite de Toulouse, 29 rue J. Marvig, Toulouse, 31055, France., Das S; Department of Ceramic Engineering, Indian Institute of Technology (BHU), Varanasi, Uttar Pradesh, 221005, India., Claverie A; CEMES-CNRS and Universite de Toulouse, 29 rue J. Marvig, Toulouse, 31055, France., Kanjilal A; Department of Physics, School of Natural Sciences, Shiv Nadar Institution of Eminence, Gautam Buddha Nagar, Uttar Pradesh, 201314, India.
Jazyk: angličtina
Zdroj: Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Dec 05, pp. e2409798. Date of Electronic Publication: 2024 Dec 05.
DOI: 10.1002/smll.202409798
Abstrakt: A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high-density memory arrays and atomic-scale in-memory computing architectures. While ion migration and electrochemical switching mechanisms are well understood, controlling the evolution of CF remains challenging for practical resistive random-access memory (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO 2 films of Ag/HfO 2 /Pt-based RRAM devices by controlling the substrate temperature. At 300 °C, the HfO 2 film exhibits a dominant monoclinic phase with maximum OV concentration, which plays a key role in achieving optimal multilevel resistive switching behavior. Self-assembled nanochannels in the HfO 2 films guide CF evolution, and the diffusion of Ag at inside these films suggests a synergistic interplay between OV and Ag⁺ ion migration for reseting the voltage-controlled resistive states. This approach addresses the endurance/retention trade-off with an impressive R on /R off ratio of ≈8000 while demonstrating growth temperature-driven OV modulation as a tool for multi-bit data storage. These findings provide a blueprint for developing high-performance oxide-based RRAM devices and offer valuable insights into multilevel resistive switching mechanisms, paving the way for future low-power, high-density memory technologies.
(© 2024 Wiley‐VCH GmbH.)
Databáze: MEDLINE
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