| Autor: |
Khan MF; Department of Electrical Engineering, Sejong University, Seoul 05006, Republic of Korea., Sadaqat S; Department of Physics, Riphah International University, Faisalabad Campus, 44000, Pakistan., Khan MA; Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea. eom@sejong.ac.kr., Rehman S; Department of Semiconductor System Engineering, Sejong University, Seoul 05006, Republic of Korea., Subhani WS; Department of Physics, University of Lahore, Lahore, 53700, Pakistan., Ouladsmane M; Department of Chemistry, College of Science, King Saud University, Riyadh, 11451, Saudi Arabia., Rehman MA; Department of Chemical Engineering, New Uzbekistan University, Tashkent, 100007, Uzbekistan., Ali F; Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland. faisal.ahmed@aalto.fi., Lipsanen H; Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland. faisal.ahmed@aalto.fi., Sun Z; Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland. faisal.ahmed@aalto.fi., Eom J; Department of Physics and Astronomy, Sejong University, Seoul 05006, Republic of Korea. eom@sejong.ac.kr., Ahmed F; Department of Electronics and Nano Engineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland. faisal.ahmed@aalto.fi. |
