Orientation-Selective Memory Switching in Quasi-1D NbSe 3 Neuromorphic Device for Omnibearing Motion Detection.

Autor: Sun RY; School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.; Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China., Hou ZY; School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China., Chen Q; Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China., Zhu BX; School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.; Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China., Zhu CY; School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.; Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China., Huang PY; School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.; Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China., Hu ZH; School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China., Zhen L; Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.; MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China., Zhou FC; School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China., Xu CY; Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.; MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China., Qin JK; School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Nov 20, pp. e2409017. Date of Electronic Publication: 2024 Nov 20.
DOI: 10.1002/adma.202409017
Abstrakt: Intelligent neuromorphic hardware holds considerable promise in addressing the growing demand for massive real-time data processing in edge computing. Resistive switching materials with intrinsic anisotropy and a compact design of non-volatile memory devices with the capability of handling spatiotemporally reconstructed data is crucial to perform sophisticated tasks in complex application scenarios. In this study, an anisotropic resistive switching cell with a planar configuration based on lithiated NbSe 3 nanosheets is demonstrated. Benefitting from the highly aligned diffusive channel associated with a quasi-1D van der Waals structure, the memristor patterned along NbSe 3 atomic chains presents robust memory switching behavior with superior stability, particularly the low set/reset voltages (0.4 V/-0.36 V) and extremely small standard deviation (0.041 V/0.051 V), among the best compared to state-of-the-art devices. More importantly, unlike traditional resistive switching materials, anisotropic ion migration in NbSe 3 crystals leads to a high orientation selectivity in the conductance update. Custom-designed neuromorphic hardware contributes to the implementation of omnibearing motion recognition for automatic pilot applications, yielding a high accuracy of 95.9% considering variations. This article presents a new strategy based on NbSe 3 crystals to develop a neuromorphic computing system with intelligent application scenarios.
(© 2024 Wiley‐VCH GmbH.)
Databáze: MEDLINE
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