Unconventional Near-Equilibrium Nucleation of Graphene on Si-Terminated SiC(0001) Surface.

Autor: Huang H; Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.; University of Chinese Academy of Sciences, 100049, Beijing, P. R. China., Ren Z; Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.; University of Chinese Academy of Sciences, 100049, Beijing, P. R. China., Xue X; Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.; University of Chinese Academy of Sciences, 100049, Beijing, P. R. China., Guo H; Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.; University of Chinese Academy of Sciences, 100049, Beijing, P. R. China., Chen J; Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.; University of Chinese Academy of Sciences, 100049, Beijing, P. R. China., Guo Y; Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.; University of Chinese Academy of Sciences, 100049, Beijing, P. R. China., Liu Y; Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.; University of Chinese Academy of Sciences, 100049, Beijing, P. R. China., Dong J; Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, 100190, Beijing, P. R. China.; University of Chinese Academy of Sciences, 100049, Beijing, P. R. China.
Jazyk: angličtina
Zdroj: Angewandte Chemie (International ed. in English) [Angew Chem Int Ed Engl] 2024 Nov 19, pp. e202417457. Date of Electronic Publication: 2024 Nov 19.
DOI: 10.1002/anie.202417457
Abstrakt: The transfer-free character of graphene growth on Silicon Carbide (SiC) makes it compatible with state-of-the-art Si semiconductor technologies for directly fabricating high-end electronics. Although significant progress has been achieved in epitaxial growth of graphene on SiC recently, the underlying nucleation mechanism remains elusive. Here, we present a theoretical study to elucidate graphene near-equilibrium nucleation on Si-terminated hexagonal-SiC(0001) surface. It is found that the ultra-large lattice mismatch between SiC(0001) surface and graphene and the highly localized electron distribution on SiC(0001) surface lead to a distinctive nucleation process: (i) Most of the magic carbon clusters on SiC(0001) show only C 1 symmetry and are mainly composed of pentagonal rings; (ii) Two possible nucleation pathways are revealed, i.e., longitudinal and circular modes; (iii) Carbon clusters are more stable on flat terraces than near atomic step edges. Based on above findings, a graphene nucleation diagram on SiC(0001) is established and experimentally observed contradictories for graphene growth on SiC(0001) are answered. Our in-depth understanding on graphene nucleation on SiC(0001) extends nucleation mechanisms of 2D crystals and will benefit high-quality graphene growth on SiC(0001).
(© 2024 Wiley-VCH GmbH.)
Databáze: MEDLINE
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