| Autor: |
Kim G; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea. sungjun@dongguk.edu., Yoo D; Department of Chemical & Biochemical Engineering, Dongguk University, Seoul 04620, Republic of Korea. minjae.choi@dgu.ac.kr., So H; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea. sungjun@dongguk.edu., Park S; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea. sungjun@dongguk.edu., Kim S; Department of AI Semiconductor Engineering, Korea University, Sejong 30019, Republic of Korea., Choi MJ; Department of Chemical & Biochemical Engineering, Dongguk University, Seoul 04620, Republic of Korea. minjae.choi@dgu.ac.kr., Kim S; Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea. sungjun@dongguk.edu. |
| Abstrakt: |
In this study, nonvolatile bipolar resistive switching and synaptic emulation behaviors are performed in an InGaP quantum dots (QDs)/HfO 2 -based memristor device. First, the physical and chemical properties of InGaP QDs are investigated by high-resolution transmission electron microscopy and spectrophotometric analysis. Through comparative experiments, it is proven that the HfO 2 layer improves the variations in resistive switching characteristics. Additionally, the Al/QDs/HfO 2 /ITO device exhibits reversible switching performances with excellent data retention. Fast switching speeds in the order of nanoseconds were confirmed, which could be explained by trapping/detrapping and quantum tunneling effects by the trap provided by nanoscale InGaP QDs. In addition, the operating voltage is decreased when the device is exposed to ultraviolet light for low-power switching. Biological synapse features such as spike-timing-dependent plasticity are emulated for neuromorphic systems. Finally, the incremental step pulse using proven algorithm method enabled the implementation of four-bit states (16 states), markedly enhancing the inference precision of neuromorphic systems. |
