| Autor: |
Park J, Youn EJ, Baek WJ, Chu EK, Kim HS, Geum DM, Kim JP, Kim BH, Kuk SH, Park HH, Kim SH |
| Jazyk: |
angličtina |
| Zdroj: |
Optics express [Opt Express] 2024 Jul 01; Vol. 32 (14), pp. 24242-24250. |
| DOI: |
10.1364/OE.525680 |
| Abstrakt: |
In this study, we explored the size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs grown on Si substrates. We successfully demonstrated the fabrication of 4-inch wafer-scale InGaN/GaN micro-LEDs, showcasing the feasibility of large-scale production. Additionally, we presented the binary pixel display with 6 µm pitch, achieving a resolution of 4232 PPI. We also introduced a method of driving the display using PWM to linearly control and counteract the blue shift in peak wavelength caused by the QCSE and band-filling effect. Our research represents a significant milestone in the development of InGaN/GaN red micro-LEDs on Si substrates, establishing them as a key component for full-color micro-LED displays. |
| Databáze: |
MEDLINE |
| Externí odkaz: |
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