| Autor: |
Neilson J; School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland., Caffrey E; School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland., Cassidy O; School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland., Gabbett C; School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland., Synnatschke K; Faculty of Chemistry and Food Chemistry, Dresden University of Technology, Dresden 01062, Germany., Schneider E; Department of Physics, Friedrich-Alexander-Universität, Erlangen-Nürnberg, Staudtstr. 7, Erlangen 91058, Germany., Munuera JM; Department of Physics, Faculty of Sciences, University of Oviedo, C/Leopoldo Calvo Sotelo, 18, Oviedo, Asturias 33007, Spain., Carey T; School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland., Rimmer M; Department of Materials and National Graphene Institute, The University of Manchester, Oxford Rd, Manchester M13 9PL, U.K., Sofer Z; Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6 166 28, Czech Republic., Maultzsch J; Department of Physics, Friedrich-Alexander-Universität, Erlangen-Nürnberg, Staudtstr. 7, Erlangen 91058, Germany., Haigh SJ; Department of Materials and National Graphene Institute, The University of Manchester, Oxford Rd, Manchester M13 9PL, U.K., Coleman JN; School of Physics, CRANN & AMBER Research Centres, Trinity College Dublin, Dublin 2, Ireland. |
| Abstrakt: |
Solution-processable 2D materials are promising candidates for a range of printed electronics applications. Yet maximizing their potential requires solution-phase processing of nanosheets into high-quality networks with carrier mobility (μ Net ) as close as possible to that of individual nanosheets (μ NS ). In practice, the presence of internanosheet junctions generally limits electronic conduction, such that the ratio of junction resistance ( R J ) to nanosheet resistance ( R NS ), determines the network mobility via μ NS /μ Net ≈ R J / R NS + 1. Hence, achieving R J / R NS < 1 is a crucial step for implementation of 2D materials in printed electronics applications. In this work, we utilize an advanced liquid-interface deposition process to maximize nanosheet alignment and network uniformity, thus reducing R J . We demonstrate the approach using graphene and MoS 2 as model materials, achieving low R J / R NS values of 0.5 and 0.2, respectively. The resultant graphene networks show a high conductivity of σ Net = 5 × 10 4 S/m while our semiconducting MoS 2 networks demonstrate record mobility of μ Net = 30 cm 2 /(V s), both at extremely low network thickness ( t Net < 10 nm). Finally, we show that the deposition process is compatible with nonlayered quasi-2D materials such as silver nanosheets (AgNS), achieving network conductivity close to bulk silver for networks <100 nm-thick. |
