| Autor: |
Lee D; Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea., Jeong S; Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea., Moon S; Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea., Yang M; Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea., Kim SH; Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea., Kim D; Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea., Lee SY; Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea., Lee IS; Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea., Jeon DW; Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea., Park JH; Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea., Kim J; Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea., Baek SW; Department of Chemical and Biological Engineering, Korea University, Seoul 02841, Republic of Korea. |
| Abstrakt: |
Broadband optoelectronics, which extend from the UV to IR regions, are crucial for imaging, autonomous driving, and object recognition. In particular, photon detection efficiency relies significantly on semiconductor properties, such as absorption coefficients and electron-hole pair generation rate, which can be optimized by designing a suitable p-n junction. In this study, we devise giant PbS colloidal quantum dots (G-PbS CQDs) that exhibit high absorption coefficients and broadband absorption. To leverage these exceptional optical properties, we combine G-PbS CQDs with an ultrawide-bandgap semiconductor, α-Ga 2 O 3 , and create an efficient G-PbS CQD/α-Ga 2 O 3 heterojunction photodetector that exhibits high performance across the UVC-vis-NIR spectrum range. The resultant heterojunction facilitates efficient electron-hole pair separation at the G-PbS CQD/α-Ga 2 O 3 heterojunction. Furthermore, we utilize transparent graphene electrodes to overcome the limitations of conventional transistor-type device structures and the substantial optical losses induced by opaque metal electrodes. This strategy maximizes the light-collection area and results in an approximately 3-orders of magnitude higher responsivity (55.5 A/W) and specific detectivity (1.66 × 10 13 Jones) compared to devices with opaque metal electrodes. |
