| Autor: |
Segantini G; Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland., Hsu CY; Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland.; Electron Spectrometry and Microscopy Laboratory (LSME), Institute of Physics (IPHYS), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland., Rischau CW; Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland., Blah P; Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands., Matthiesen M; Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands., Gariglio S; Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland., Triscone JM; Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland., Alexander DTL; Electron Spectrometry and Microscopy Laboratory (LSME), Institute of Physics (IPHYS), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland., Caviglia AD; Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland. |
| Abstrakt: |
The epitaxial growth of complex oxides enables the production of high-quality films, yet substrate choice is restricted to certain symmetry and lattice parameters, thereby limiting the technological applications of epitaxial oxides. In comparison, the development of free-standing oxide membranes gives opportunities to create novel heterostructures by nonepitaxial stacking of membranes, opening new possibilities for materials design. Here, we introduce a method for writing, with atomic precision, ionically bonded crystalline materials across the gap between an oxide membrane and a carrier substrate. The process involves a thermal pretreatment, followed by localized exposure to the raster scan of a scanning transmission electron microscopy (STEM) beam. STEM imaging and electron energy-loss spectroscopy show that we achieve atomically sharp interface reconstructions between a 30-nm-thick SrTiO 3 membrane and a niobium-doped SrTiO 3 (001)-oriented carrier substrate. These findings indicate new strategies for fabricating synthetic heterostructures with novel structural and electronic properties. |
