Novel Octa-Structure Metamaterial Architecture for High Q-Factor and High Sensitivity in THz Impedance Spectroscopy.

Autor: Khand H; Department of Photonics and Electro-Optics Engineering, School of Electrical and Computer Engineering, Ben-Gurion University of the Negev, Beer Sheva, 84105, Israel., Sengupta R; Department of Photonics and Electro-Optics Engineering, School of Electrical and Computer Engineering, Ben-Gurion University of the Negev, Beer Sheva, 84105, Israel., Sarusi G; Department of Photonics and Electro-Optics Engineering, School of Electrical and Computer Engineering, Ben-Gurion University of the Negev, Beer Sheva, 84105, Israel.
Jazyk: angličtina
Zdroj: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2024 Oct 30, pp. e2407824. Date of Electronic Publication: 2024 Oct 30.
DOI: 10.1002/advs.202407824
Abstrakt: Terahertz (THz) electric inductive-capacitive (ELC) resonant metamaterials (MMs) are well established tools that can be used to detect the presence of dielectric material (e.g., nanoparticles, bioparticles, etc.) spread on their surfaces within the gap of the capacitive plates of a nanoantenna array. In THz spectroscopy, the amount of the red shift in the resonance frequency (ΔF) plays an important role in the detection of nanoparticles and their concentration. We introduce a new LC resonant MM architecture in the ELC category that maximizes dielectric sensitivity. The newly proposed architecture has an octahedral structure with uniform capacitive gaps at each forty-five-degree interval, making the structure super-symmetric and polarization independent. The inductor core is condensed into a central solid circle connecting all the eight lobes of the octahedron, thereby completing the LC circuit. This ELC resonator has very large active areas (capacitor-gaps), with hotspots at the periphery of each unit cell. The MM structure is repeated in a clustered fashion, so that the peripheral hotspots are also utilized in dielectric sensing. This results in enhancing the quality factor of MM resonance, as well as in increasing ΔF. The research comprises a combination of rigorous system-level simulations along with THz impedance spectroscopy laboratory experiments. We achieved a highly sensitive MM sensor with sensitivity reaching 1600 GHz/RIU. This sensor is fully CMOS compatible and has promising potential applications in high-sensitivity bio-sensing, characterization of nanoparticles, and ultra-low-concentration dielectrics detection, as well as in sensing differential changes in the composition of substances deposited on the metasurface.
(© 2024 The Author(s). Advanced Science published by Wiley‐VCH GmbH.)
Databáze: MEDLINE
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