Route to Enhancing Remote Epitaxy of Perovskite Complex Oxide Thin Films.

Autor: Lee S; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Zhang X; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Abdollahi P; Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506, United States., Barone MR; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States., Dong C; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; 2-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Yoo YJ; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Song MK; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Lee D; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Ryu JE; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States., Choi JH; Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea., Lee JH; Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon 16499, Republic of Korea., Robinson JA; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; 2-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Schlom DG; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14850, United States., Kum HS; Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea., Chang CS; Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea., Seo A; Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506, United States., Kim J; Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.; Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.
Jazyk: angličtina
Zdroj: ACS nano [ACS Nano] 2024 Nov 12; Vol. 18 (45), pp. 31225-31233. Date of Electronic Publication: 2024 Oct 29.
DOI: 10.1021/acsnano.4c09445
Abstrakt: Remote epitaxy is taking center stage in creating freestanding complex oxide thin films with high crystallinity that could serve as an ideal building block for stacking artificial heterostructures with distinctive functionalities. However, there exist technical challenges, particularly in the remote epitaxy of perovskite oxides associated with their harsh growth environments, making the graphene interlayer difficult to survive. Transferred graphene, typically used for creating a remote epitaxy template, poses limitations in ensuring the yield of perovskite films, especially when pulsed laser deposition (PLD) growth is carried out, since graphene degradation can be easily observed. Here, we employ spectroscopic ellipsometry to determine the critical factors that damage the integrity of graphene during PLD by tracking the change in optical properties of graphene in situ . To mitigate the issues observed in the PLD process, we propose an alternative growth strategy based on molecular beam epitaxy to produce single-crystalline perovskite membranes.
Databáze: MEDLINE