Broadband Light Harvesting from Scalable Two-Dimensional Semiconductor Multi-Heterostructures.

Autor: Lin D; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Lynch J; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Wang S; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Hu Z; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Rai RK; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Zhang H; Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 208999, United States.; Theiss Research, Inc., La Jolla, California 92037, United States., Chen C; 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Penn State University, University Park, Pennsylvania 16802, United States.; Department of Materials Science and Engineering, 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16801, United States., Kumari S; 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Penn State University, University Park, Pennsylvania 16802, United States.; Department of Materials Science and Engineering, 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16801, United States., Stach EA; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States., Davydov AV; Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 208999, United States., Redwing JM; 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Penn State University, University Park, Pennsylvania 16802, United States.; Materials Science and Engineering, Penn State University, University Park, Pennsylvania 16802, United States.; Department of Materials Science and Engineering, 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16801, United States., Jariwala D; Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.; Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2024 Nov 06; Vol. 24 (44), pp. 13935-13944. Date of Electronic Publication: 2024 Oct 28.
DOI: 10.1021/acs.nanolett.4c02963
Abstrakt: Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experimental realization of an unpatterned/planar semiconductor thin-film absorber based on monolayer transition-metal dichalcogenides. We experimentally demonstrate an average total absorption in the visible range (450-700 nm) of >70% using <4 nm of semiconductor absorbing materials scalable over large areas with vapor phase growth techniques. Our analysis suggests that a power conversion efficiency of 15.54% and a specific power >300 W g -1 may be achieved in a photovoltaic cell based on this metamaterial absorber.
Databáze: MEDLINE
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