Vanadium incorporation in 2D-layered MoSe 2 .

Autor: Del Piero JVB; Departamento de Física, Universidade Federal do Espírito Santo-UFES, 29075-910 Vitória, ES, Brazil., Miwa RH; Instituto de Física, Universidade Federal de Uberlândia-UFU, 38400-902 Uberlândia, MG, Brazil., Scopel WL; Departamento de Física, Universidade Federal do Espírito Santo-UFES, 29075-910 Vitória, ES, Brazil.
Jazyk: angličtina
Zdroj: Journal of physics. Condensed matter : an Institute of Physics journal [J Phys Condens Matter] 2024 Nov 11; Vol. 37 (4). Date of Electronic Publication: 2024 Nov 11.
DOI: 10.1088/1361-648X/ad8abb
Abstrakt: Recent advances in experimental techniques have made it possible to manipulate the structural and electronic properties of two-dimensional layered materials (2DM) through interaction with foreign atoms. Using quantum mechanics calculations based on the density functional theory, we explored the dependency of the structural, energetic, electronic, and magnetic properties of the interaction between Vanadium (V) atoms and monolayer and bilayer MoSe 2 . Spin-polarized metallic behavior was observed for high V concentration, and a semiconductor/metal interface emerged due to V adsorption on top of BL MoSe 2 . Our research demonstrated that the functionalization of 2D materials makes an important contribution to the design of spintronic devices based on a 2D-layered materials platform.
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Databáze: MEDLINE
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