| Autor: |
Li W; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Zhao Z; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Guo J; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Chen B; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Wang X; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Bai Y; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Chen J; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Yang D; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Gao Q; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Yang X; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Wang J; Prof. Dengyuan Song, Dr. Jianming Wang R&D Department, Das Solar Co., Ltd., No 43 Bailing South Road, Quzhou Green Industry Clustering Zone, Quzhou, Zhejiang 324022, China., Song D; Prof. Dengyuan Song, Dr. Jianming Wang R&D Department, Das Solar Co., Ltd., No 43 Bailing South Road, Quzhou Green Industry Clustering Zone, Quzhou, Zhejiang 324022, China., Wang S; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Zhang X; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China., Chen J; Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China. |
| Abstrakt: |
Passivation technology is crucial for reducing interface defects and impacting the performance of crystalline silicon (c-Si) solar cells. Concurrently, maintaining a thin passivation layer is essential for ensuring efficient carrier transport. With an ultrathin passivated contact structure, both Silicon Heterojunction (SHJ) cells and Tunnel Oxide Passivated Contact (TOPCon) solar cells achieve an efficiency surpassing 26%. To reduce production costs and simplify solar cell manufacturing processes, the rapid development of organic material passivation technology has emerged. However, its widespread industrial production is hindered by environmental safety concerns, such as strong acid corrosion and biological and ecological safety issues. Here, we discovered a low-cost self-assembled monolayer (SAM) hole-selective transport material known as 2PACz ([2-(9H-carbazol-9-yl) ethyl] phosphonic acid) with phosphate groups to form c-Si solar cells for the first time. The ultrathin film of 2PACz with phosphate groups can establish strong and stable P-O-Si bonds on the silicon surface. Meanwhile, like 2PACz, a uniform ultrathin film with a carbazole function group can offer electron-localizing and thus hole-selective properties, which provides ideas for studying dopant-free silicon solar cells. As a result of such interfacial passivation engineering, it plays an important role in repairing porous structures, such as pyramid-textured silicon surfaces, and cutting losses during the commercialization of c-Si solar cells. Crucially, this advancement offers insights for the development of new high-efficiency ultrathin film passivation methods in the postsilicon era. |
