The Role of Hydrogen in ReRAM.

Autor: Cox HRJ; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Sharpe MK; Ion Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK., McAleese C; Ion Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK., Laitinen M; Department of Physics, University of Jyväskylä, P.O. Box 35, Jyväskylä, FI-40014, Finland., Dulai J; Ion Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK., Smith R; Ion Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK., England J; Ion Beam Centre, Advanced Technology Institute, University of Surrey, UK, Guildford, GU2 7XH, UK., Ng WH; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Buckwell M; Department of Chemical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Zhao L; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Fearn S; Department of Materials, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK., Mehonic A; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK., Kenyon AJ; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Dec; Vol. 36 (52), pp. e2408437. Date of Electronic Publication: 2024 Oct 14.
DOI: 10.1002/adma.202408437
Abstrakt: Previous research on transistor gate oxides reveals a clear link between hydrogen content and oxide breakdown. This has implications for redox-based resistive random access memory (ReRAM) devices, which exploit soft, reversible, dielectric breakdown, as hydrogen is often not considered in modeling or measured experimentally. Here quantitative measurements, corroborated across multiple techniques are reported, that reveal ReRAM devices, whether manufactured in a university setting or research foundry, contain concentrations of hydrogen at levels likely to impact resistance switching behavior. To the knowledge this is the first empirical measurement depth profiling hydrogen concentration through a ReRAM device. Applying a recently-developed Secondary Ion Mass Spectrometry analysis technique enables to measure hydrogen diffusion across the interfaces of SiO x ReRAM devices as a result of operation. These techniques can be applied to a broad range of devices to further understand ReRAM operation. Careful control of temperatures, precursors, and exposure to ambient during fabrication should limit hydrogen concentration. Additionally, using thin oxynitride or TiO 2 capping layers should prevent diffusion of hydrogen and other contaminants into devices during operation. Applying these principles to ReRAM devices will enable considerable, informed, improvements in performance.
(© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.)
Databáze: MEDLINE
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