Two-photon absorption in silicon using the real density matrix approach.
| Autor: | Ziemkiewicz D; Institute of Mathematics and Physics, Technical University of Bydgoszcz, Al. Prof. S. Kaliskiego 7, 85-789 Bydgoszcz, Poland., Knez D; Department of Chemistry, University of California, Irvine, California 92697, USA., Garcia EP; Department of Chemistry, University of California, Irvine, California 92697, USA., Zielińska-Raczyńska S; Institute of Mathematics and Physics, Technical University of Bydgoszcz, Al. Prof. S. Kaliskiego 7, 85-789 Bydgoszcz, Poland., Czajkowski G; Institute of Mathematics and Physics, Technical University of Bydgoszcz, Al. Prof. S. Kaliskiego 7, 85-789 Bydgoszcz, Poland., Salandrino A; Department of Electrical Engineering, University of Kansas, Lawrence, Kansas 66045, USA., Kharintsev SS; Institute of Physics, Kazan Federal University, Kazan 420008, Russia., Noskov AI; Institute of Physics, Kazan Federal University, Kazan 420008, Russia., Potma EO; Department of Chemistry, University of California, Irvine, California 92697, USA., Fishman DA; Department of Chemistry, University of California, Irvine, California 92697, USA. |
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| Jazyk: | angličtina |
| Zdroj: | The Journal of chemical physics [J Chem Phys] 2024 Oct 14; Vol. 161 (14). |
| DOI: | 10.1063/5.0219329 |
| Abstrakt: | Two-photon absorption in indirect gap semiconductors is a frequently encountered, but not well-understood phenomenon. To address this, the real-density matrix approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting. (© 2024 Author(s). Published under an exclusive license by AIP Publishing.) |
| Databáze: | MEDLINE |
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