Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature.

Autor: Choi J; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Park J; Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea. jungmin0123@kaist.ac.kr., Noh S; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Lee J; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Lee S; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Choe D; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.; Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, Korea., Jung H; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Jo J; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Oh I; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA., Han J; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Kwon SY; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea.; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Ahn CW; Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan, Republic of Korea., Min BC; Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, Korea., Jin H; Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea., Kim CH; Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, Republic of Korea. chkim82@snu.ac.kr.; Department of Physics and Astronomy, Seoul National University, Seoul, Korea. chkim82@snu.ac.kr.; Korea Institute for Advanced Study, Seoul, Korea. chkim82@snu.ac.kr., Kim KW; Center for Semiconductor Technology, Korea Institute of Science and Technology, Seoul, Korea. kwkim@yonsei.ac.kr.; Department of Physics, Yonsei University, Seoul, Korea. kwkim@yonsei.ac.kr., Yoo JW; Department of Materials and Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea. jwyoo@unist.ac.kr.; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea. jwyoo@unist.ac.kr.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2024 Oct 09; Vol. 15 (1), pp. 8746. Date of Electronic Publication: 2024 Oct 09.
DOI: 10.1038/s41467-024-52835-z
Abstrakt: Current silicon-based CMOS devices face physical limitations in downscaling size and power loss, restricting their capability to meet the demands for data storage and information processing of emerging technologies. One possible alternative is to encode the information in a non-volatile magnetic state and manipulate this spin state electronically, as in spintronics. However, current spintronic devices rely on the current-driven control of magnetization, which involves Joule heating and power dissipation. This limitation has motivated intense research into the voltage-driven manipulation of spin signals to achieve energy-efficient device operation. Here, we show non-volatile control of spin-charge conversion at room temperature in graphene-based heterostructures through Fermi level tuning. We use a polymeric ferroelectric film to induce non-volatile charging in graphene. To demonstrate the switching of spin-to-charge conversion we perform ferromagnetic resonance and inverse Edelstein effect experiments. The sign change of output voltage is derived by the change of carrier type, which can be achieved solely by a voltage pulse. Our results provide an alternative approach for the electric-field control of spin-charge conversion, which constitutes a building block for the next generation of spin-orbitronic memory and logic devices.
(© 2024. The Author(s).)
Databáze: MEDLINE
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