| Autor: |
Wang HN; Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA., An F; Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA., Wong CY; Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA., Yin K; Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA., Liu J; Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA., Wang Y; Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA., Zuo JM; Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA.; Frederick Seitz Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, USA., Schleife A; Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA.; Frederick Seitz Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, USA.; National Center for Supercomputing Applications, University of Illinois Urbana-Champaign, Urbana, IL, USA., Cao Q; Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA.; Frederick Seitz Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, USA.; Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, IL, USA.; Department of Chemistry, University of Illinois Urbana-Champaign, Urbana, IL, USA.; Holonyak Micro & Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, IL, USA. |
| Abstrakt: |
Solution-processable semiconductors hold promise in enabling applications requiring cost-effective electronics at scale but suffer from low performance limited by defects. We show that ordered defect compound semiconductor CuIn 5 Se 8 , which forms regular defect complexes with defect-pair compensation, can simultaneously achieve high performance and solution processability. CuIn 5 Se 8 transistors exhibit defect-tolerant, band-like transport supplying an output current above 35 microamperes per micrometer, with a large on/off ratio greater than 10 6 , a small subthreshold swing of 189 ± 21 millivolts per decade, and a high field-effect mobility of 58 ± 10 square centimeters per volt per second, with excellent uniformity and stability, superior to devices built on its less defective parent compound CuInSe 2 , analogous binary compound In 2 Se 3 , and other solution-deposited semiconductors. They can be monolithically integrated with carbon nanotube transistors to form high-speed and low-voltage three-dimensional complementary logic circuits and with micro-light-emitting diodes to realize high-resolution displays. |
