Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors.

Autor: Debashis P; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Ryu H; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Steinhardt R; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Buragohain P; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Plombon JJ; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Maxey K; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., O'Brien KP; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Kim R; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Sen Gupta A; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Rogan C; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Lux J; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Tung IC; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Adams D; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Gulseren M; UC Davis, Davis, California 95616, United States., Verma Penumatcha A; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Shivaraman S; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Li H; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Zhong T; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Harlson S; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Tronic T; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Oni A; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Putna S; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Clendenning SB; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Metz M; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Radosavljevic M; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Avci U; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States., Young IA; Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States.
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2024 Oct 09; Vol. 24 (40), pp. 12353-12360. Date of Electronic Publication: 2024 Oct 01.
DOI: 10.1021/acs.nanolett.4c02069
Abstrakt: The experimental demonstration of a p-type 2D WSe 2 transistor with a ferroelectric perovskite BaTiO 3 gate oxide is presented. The 30 nm thick BaTiO 3 gate stack shows a robust ferroelectric hysteresis with a remanent polarization of 20 μC/cm 2 and further enables a capacitance equivalent thickness of 0.5 nm in the hybrid WSe 2 /BaTiO 3 stack due to its high dielectric constant of 323. We demonstrate one of the best ON currents for perovskite gate 2D transistors in the literature. This is enabled by high-quality epitaxial growth of BaTiO 3 and a single 2D layer transfer based fabrication method that is shown to be amenable to silicon platforms. This demonstration is an important milestone toward the integration of crystalline complex oxides with 2D channel materials for scaled CMOS and low-voltage ferroelectric logic applications.
Databáze: MEDLINE
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