Deviceization of high-performance and flexible Ag 2 Se films for electronic skin and servo rotation angle control.

Autor: Chen YX; Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China., Shi XL; School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4000, Australia., Zhang JZ; Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China., Nisar M; Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China., Zha ZZ; Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China., Zhong ZN; Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China., Li F; Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China., Liang GX; Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China., Luo JT; Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China., Li M; School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4000, Australia., Cao T; School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4000, Australia., Liu WD; School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4000, Australia., Xu DY; Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Sha Tin, China., Zheng ZH; Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, State Key Laboratory of Radio Frequency Heterogeneous Integration, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, Guangdong, 518060, China. zhengzh@szu.edu.cn., Chen ZG; School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, QLD, 4000, Australia. zhigang.chen@qut.edu.au.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2024 Sep 27; Vol. 15 (1), pp. 8356. Date of Electronic Publication: 2024 Sep 27.
DOI: 10.1038/s41467-024-52680-0
Abstrakt: Ag 2 Se shows significant potential for near-room-temperature thermoelectric applications, but its performance and device design are still evolving. In this work, we design a novel flexible Ag 2 Se thin-film-based thermoelectric device with optimized electrode materials and structure, achieving a high output power density of over 65 W m -2 and a normalized power density up to 3.68 μW cm -2 K -2 at a temperature difference of 42 K. By fine-tuning vapor selenization time, we strengthen the (013) orientation and carrier mobility of Ag 2 Se films, reducing excessive Ag interstitials and achieving a power factor of over 29 μW cm -1 K -2 at 393 K. A protective layer boosts flexibility of the thin film, retaining 90% performance after 1000 bends at 60°. Coupled with p-type Sb 2 Te 3 thin films and rational simulations, the device shows rapid human motion response and precise servo motor control, highlighting the potential of high-performance Ag 2 Se thin films in advanced applications.
(© 2024. The Author(s).)
Databáze: MEDLINE
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