Ultra-Transparent and Multifunctional IZVO Mesh Electrodes for Next-Generation Flexible Optoelectronics.

Autor: Nirmal KA; School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, Republic of Korea., Dongale TD; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India., Khot AC; School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, Republic of Korea., Yao C; School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, Republic of Korea., Kim N; School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, Republic of Korea., Kim TG; School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, Republic of Korea. tgkim1@korea.ac.kr.
Jazyk: angličtina
Zdroj: Nano-micro letters [Nanomicro Lett] 2024 Sep 26; Vol. 17 (1), pp. 12. Date of Electronic Publication: 2024 Sep 26.
DOI: 10.1007/s40820-024-01525-y
Abstrakt: Mechanically durable transparent electrodes are essential for achieving long-term stability in flexible optoelectronic devices. Furthermore, they are crucial for applications in the fields of energy, display, healthcare, and soft robotics. Conducting meshes represent a promising alternative to traditional, brittle, metal oxide conductors due to their high electrical conductivity, optical transparency, and enhanced mechanical flexibility. In this paper, we present a simple method for fabricating an ultra-transparent conducting metal oxide mesh electrode using self-cracking-assisted templates. Using this method, we produced an electrode with ultra-transparency (97.39%), high conductance (R s  = 21.24 Ω sq -1 ), elevated work function (5.16 eV), and good mechanical stability. We also evaluated the effectiveness of the fabricated electrodes by integrating them into organic photovoltaics, organic light-emitting diodes, and flexible transparent memristor devices for neuromorphic computing, resulting in exceptional device performance. In addition, the unique porous structure of the vanadium-doped indium zinc oxide mesh electrodes provided excellent flexibility, rendering them a promising option for application in flexible optoelectronics.
(© 2024. The Author(s).)
Databáze: MEDLINE
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