Physics and chemistry of nitrogen dioxide (NO 2 ) adsorption on gallium nitride (GaN) surface and its interaction with the yellow-luminescence-associated surface state.

Autor: Turkulets Y; School of Electrical and Computer Engineering, Ben Gurion University, Ben Gurion Ave. 1, Beer Sheva 8410501, Israel., Shauloff N; Department of Chemistry, Ben Gurion University, Ben Gurion Ave. 1, Beer Sheva 8410501, Israel., Chaulker OH; School of Electrical and Computer Engineering, Ben Gurion University, Ben Gurion Ave. 1, Beer Sheva 8410501, Israel., Jelinek R; Department of Chemistry, Ben Gurion University, Ben Gurion Ave. 1, Beer Sheva 8410501, Israel., Shalish I; School of Electrical and Computer Engineering, Ben Gurion University, Ben Gurion Ave. 1, Beer Sheva 8410501, Israel. Electronic address: shalish@bgu.ac.il.
Jazyk: angličtina
Zdroj: Journal of colloid and interface science [J Colloid Interface Sci] 2025 Jan 15; Vol. 678 (Pt C), pp. 789-795. Date of Electronic Publication: 2024 Sep 05.
DOI: 10.1016/j.jcis.2024.09.033
Abstrakt: Surface states have been a longstanding and sometimes underestimated problem in gallium nitride (GaN) based devices. The instability caused by surface-charge-trapping in GaN-based transistors is practically the same problem faced by the inventors of the silicon (Si) field effect transistors more than half a century ago. Although in Si this problem was eventually solved by oxygen and hydrogen-based passivation, in GaN, such breakthrough has yet to be made. Apparently, some of this surface charge originates in molecules adsorbed on its surface. Here, it is shown that the charge density associated with the GaN yellow band desorbs upon mild heat treatment in vacuum and re-adsorbs on exposure to the air. Selective exposure of GaN to nitrogen dioxide (NO 2 ) reproduces this surface charge to its original distribution, as does exposure to air. Residual gas analysis of the gases desorbed during heat treatment shows a large concentration of nitric oxide (NO). These observations suggest that selective adsorption of NO 2 is responsible for the surface charge that deleteriously affects the electrical properties of GaN. The physics and chemistry of this NO 2 adsorption, reported here, may open a new path in the search for passivation to improve GaN device reliability.
Competing Interests: Declaration of competing interest The authors declare the following financial interests/personal relationships which may be considered as potential competing interests: Ilan Shalish reports financial support was provided by Office of Naval Research. If there are other authors, they declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
(Copyright © 2024 Elsevier Inc. All rights reserved.)
Databáze: MEDLINE
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