Autor: |
Djeghdi K; Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland., Karpov D; Paul Scherrer Institute, Forschungsstrasse 111, 5232 Villigen-PSI, Switzerland.; European Synchrotron Radiation Facility, 71 Av. des Martyrs, 38000 Grenoble, France., Abdollahi SN; Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland., Godlewska K; Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland., Iseli R; Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland., Holler M; Paul Scherrer Institute, Forschungsstrasse 111, 5232 Villigen-PSI, Switzerland., Donnelly C; Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, 01187 Dresden, Germany., Yuasa T; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States., Sai H; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States., Wiesner UB; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States.; Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, United States., Steiner U; Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland., Wilts BD; Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland.; Department for Chemistry and Physics of Materials, University of Salzburg, Jakob-Haringer-Strasse 2a 5020 Salzburg, Austria., Musya M; Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan., Fukami S; Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.; Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.; Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aramaki Aza Aoba, Aoba-ku, Sendai 980-0845, Japan.; WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.; Inamori Research Institute for Science, Kyoto 600-8411, Japan., Ohno H; Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.; Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.; Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aramaki Aza Aoba, Aoba-ku, Sendai 980-0845, Japan.; WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan., Diaz A; Paul Scherrer Institute, Forschungsstrasse 111, 5232 Villigen-PSI, Switzerland., Llandro J; Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.; Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan., Gunkel I; Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, 1700 Fribourg, Switzerland. |