Electronics and Optoelectronics Based on Tellurium.

Autor: Zha J; Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, SAR, 999077, China., Dong D; Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, SAR, 999077, China., Huang H; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Xia Y; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Tong J; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Liu H; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Chan HP; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Ho JC; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Zhao C; Huawei Technologies CO., LTD, Shenzhen, 518000, China., Chai Y; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, SAR, 999077, China., Tan C; Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, SAR, 999077, China.; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Sep 16, pp. e2408969. Date of Electronic Publication: 2024 Sep 16.
DOI: 10.1002/adma.202408969
Abstrakt: As a true 1D system, group-VIA tellurium (Te) is composed of van der Waals bonded molecular chains within a triangular crystal lattice. This unique crystal structure endows Te with many intriguing properties, including electronic, optoelectronic, thermoelectric, piezoelectric, chirality, and topological properties. In addition, the bandgap of Te exhibits thickness dependence, ranging from 0.31 eV in bulk to 1.04 eV in the monolayer limit. These diverse properties make Te suitable for a wide range of applications, addressing both established and emerging challenges. This review begins with an elaboration of the crystal structures and fundamental properties of Te, followed by a detailed discussion of its various synthesis methods, which primarily include solution phase, and chemical and physical vapor deposition technologies. These methods form the foundation for designing Te-centered devices. Then the device applications enabled by Te nanostructures are introduced, with an emphasis on electronics, optoelectronics, sensors, and large-scale circuits. Additionally, performance optimization strategies are discussed for Te-based field-effect transistors. Finally, insights into future research directions and the challenges that lie ahead in this field are shared.
(© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.)
Databáze: MEDLINE
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