An overview of critical applications of resistive random access memory.

Autor:	Zahoor F; Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia famed@kfu.edu.sa., Nisar A; Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee India., Bature UI; Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas Malaysia., Abbas H; Department of Nanotechnology and Advanced Materials Engineering, Sejong University Seoul 143-747 Republic of Korea haider@sejong.ac.kr., Bashir F; Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia famed@kfu.edu.sa., Chattopadhyay A; College of Computing and Data Science, Nanyang Technological University 639798 Singapore., Kaushik BK; Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee India., Alzahrani A; Department of Computer Engineering, College of Computer Sciences and Information Technology, King Faisal University Saudi Arabia famed@kfu.edu.sa., Hussin FA; Department of Electrical and Electronics Engineering, Universiti Teknologi Petronas Malaysia.
Jazyk:	angličtina
Zdroj:	Nanoscale advances [Nanoscale Adv] 2024 Sep 09. Date of Electronic Publication: 2024 Sep 09.
DOI:	10.1039/d4na00158c
Abstrakt:	The rapid advancement of new technologies has resulted in a surge of data, while conventional computers are nearing their computational limits. The prevalent von Neumann architecture, where processing and storage units operate independently, faces challenges such as data migration through buses, leading to decreased computing speed and increased energy loss. Ongoing research aims to enhance computing capabilities through the development of innovative chips and the adoption of new system architectures. One noteworthy advancement is Resistive Random Access Memory (RRAM), an emerging memory technology. RRAM can alter its resistance through electrical signals at both ends, retaining its state even after power-down. This technology holds promise in various areas, including logic computing, neural networks, brain-like computing, and integrated technologies combining sensing, storage, and computing. These cutting-edge technologies offer the potential to overcome the performance limitations of traditional architectures, significantly boosting computing power. This discussion explores the physical mechanisms, device structure, performance characteristics, and applications of RRAM devices. Additionally, we delve into the potential future adoption of these technologies at an industrial scale, along with prospects and upcoming research directions. Competing Interests: There are no conflicts to declare. (This journal is © The Royal Society of Chemistry.)
Databáze:	MEDLINE
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