Expression of concern: Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing.

Autor:	Elboughdiri N; Chemical Engineering Department, College of Engineering, University of Ha'il P.O. Box 2440 Ha'il 81441 Saudi Arabia.; Chemical Engineering Process Department, National School of Engineers Gabes, University of Gabes Gabes 6029 Tunisia., Iqbal S; Department of Physics, University of Wisconsin La Crosse WI USA., Abdullaev S; Engineering School, Central Asian University Tashkent Uzbekistan.; Scientific and Innovation Department, Tashkent State Pedagogical University Named After Nizami Tashkent Uzbekistan., Aljohani M; Department of Chemistry, College of Science, Taif University P.O. BOX. 110 21944 Taif Saudi Arabia., Safeen A; Department of Physics, University of Poonch Rawalakot Rawalakot 12350 Pakistan., Althubeiti K; Department of Chemistry, College of Science, Taif University P.O. BOX. 110 21944 Taif Saudi Arabia., Khan R; Department of Physics, University of Lakki Marwat Lakki Marwat KP Pakistan rajwali@ulm.edu.pk khan_phy@foxmail.com.; Department of Physics, United Arab Emirates University United Arab Emirates.
Jazyk:	angličtina
Zdroj:	RSC advances [RSC Adv] 2024 Sep 04; Vol. 14 (39), pp. 28299. Date of Electronic Publication: 2024 Sep 04 (Print Publication: 2024).
DOI:	10.1039/d4ra90092h
Abstrakt:	Expression of concern for 'Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing' by Noureddine Elboughdiri et al. , RSC Adv. , 2023, 13 , 35993-36008, https://doi.org/10.1039/D3RA06853F. (This journal is © The Royal Society of Chemistry.)
Databáze:	MEDLINE
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