| Autor: |
Michail A; Department of Physics, University of Patras, Patras 26504, Greece.; Institute of Chemical Engineering Sciences, Foundation for Research and Technology Hellas (FORTH - ICE/HT), Patras 26504, Greece., Yang JA; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Filintoglou K; School of Physics, Department of Solid State Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece., Balakeras N; School of Physics, Department of Solid State Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece., Nattoo CA; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Bailey CS; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Daus A; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.; Department of Microsystems Engineering, University of Freiburg, Freiburg 79110, Germany., Parthenios J; Institute of Chemical Engineering Sciences, Foundation for Research and Technology Hellas (FORTH - ICE/HT), Patras 26504, Greece., Pop E; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.; Department of Materials Science, Stanford University, Stanford, California 94305, United States.; Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States., Papagelis K; Institute of Chemical Engineering Sciences, Foundation for Research and Technology Hellas (FORTH - ICE/HT), Patras 26504, Greece.; School of Physics, Department of Solid State Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece. |
| Abstrakt: |
Monolayer transition metal dichalcogenides are intensely explored as active materials in 2D material-based devices due to their potential to overcome device size limitations, sub-nanometric thickness, and robust mechanical properties. Considering their large band gap sensitivity to mechanical strain, single-layered TMDs are well-suited for strain-engineered devices. While the impact of various types of mechanical strain on the properties of a variety of TMDs has been studied in the past, TMD-based devices have rarely been studied under mechanical deformations, with uniaxial strain being the most common one. Biaxial strain on the other hand, which is an important mode of deformation, remains scarcely studied as far as 2D material devices are concerned. Here, we study the strain transfer efficiency in MoS 2 - and WSe 2 -based flexible transistor structures under biaxial deformation. Utilizing Raman spectroscopy, we identify that strains as high as 0.55% can be efficiently and homogeneously transferred from the substrate to the material in the transistor channel. In particular, for the WSe 2 transistors, we capture the strain dependence of the higher-order Raman modes and show that they are up to five times more sensitive compared to the first-order ones. Our work demonstrates Raman spectroscopy as a nondestructive probe for strain detection in 2D material-based flexible electronics and deepens our understanding of the strain transfer effects on 2D TMD devices. |
