Quasi-equilibrium growth of inch-scale single-crystal monolayer α-In 2 Se 3 on fluor-phlogopite.

Autor: Si K; School of Materials Science and Engineering, Beihang University, Beijing, P. R. China., Zhao Y; Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China.; Faculty of Materials Science and Energy Engineer, Shenzhen University of Advanced Technology, Shenzhen, China., Zhang P; School of Materials Science and Engineering, Beihang University, Beijing, P. R. China. zhangpeng567@buaa.edu.cn., Wang X; School of Materials Science and Engineering, Beihang University, Beijing, P. R. China., He Q; School of Materials Science and Engineering, Beihang University, Beijing, P. R. China.; The Analysis & Testing Center, Beihang University, Beijing, P. R. China., Wei J; School of Materials Science and Engineering, Beihang University, Beijing, P. R. China., Li B; School of Materials Science and Engineering, Beihang University, Beijing, P. R. China., Wang Y; School of Materials Science and Engineering, Beihang University, Beijing, P. R. China., Cao A; Technical Center for Multifunctional Magneto Optical Spectroscopy (Shanghai), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, P. R. China., Hu Z; Technical Center for Multifunctional Magneto Optical Spectroscopy (Shanghai), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai, P. R. China., Tang P; School of Materials Science and Engineering, Beihang University, Beijing, P. R. China. peizhet@buaa.edu.cn.; Center for Free-Electron Laser Science, Max Planck Institute for the Structure and Dynamics of Matter, Hamburg, Germany. peizhet@buaa.edu.cn., Ding F; Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China. f.ding@siat.ac.cn.; Faculty of Materials Science and Energy Engineer, Shenzhen University of Advanced Technology, Shenzhen, China. f.ding@siat.ac.cn., Gong Y; School of Materials Science and Engineering, Beihang University, Beijing, P. R. China. yongjigong@buaa.edu.cn.; Tianmushan Laboratory Xixi Octagon City, Hangzhou, P. R. China. yongjigong@buaa.edu.cn.; Center for Micro-Nano Innovation of Beihang University, Beijing, P. R. China. yongjigong@buaa.edu.cn.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2024 Aug 29; Vol. 15 (1), pp. 7471. Date of Electronic Publication: 2024 Aug 29.
DOI: 10.1038/s41467-024-51322-9
Abstrakt: Epitaxial growth of two-dimensional (2D) materials with uniform orientation has been previously realized by introducing a small binding energy difference between the two locally most stable orientations. However, this small energy difference can be easily disturbed by uncontrollable dynamics during the growth process, limiting its practical applications. Herein, we propose a quasi-equilibrium growth (QEG) strategy to synthesize inch-scale monolayer α-In 2 Se 3 single crystals, a semiconductor with ferroelectric properties, on fluor-phlogopite substrates. The QEG facilitates the discrimination of small differences in binding energy between the two locally most stable orientations, realizing robust single-orientation epitaxy within a broad growth window. Thus, single-crystal α-In 2 Se 3 film can be epitaxially grown on fluor-phlogopite, the cleavage surface atomic layer of which has the same 3-fold rotational symmetry with α-In 2 Se 3 . The resulting crystalline quality enables high electron mobility up to 117.2 cm 2 V -1 s -1 in α-In 2 Se 3 ferroelectric field-effect transistors, exhibiting reliable nonvolatile memory performance with long retention time and robust cycling endurance. In brief, the developed QEG method provides a route for preparing larger-area single-crystal 2D materials and a promising opportunity for applications of 2D ferroelectric devices and nanoelectronics.
(© 2024. The Author(s).)
Databáze: MEDLINE
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