| Autor: |
O'Sullivan B; IMEC, Kapeldreef 75, 3001 Leuven, Belgium., Rathi A; IMEC, Kapeldreef 75, 3001 Leuven, Belgium., Alian A; IMEC, Kapeldreef 75, 3001 Leuven, Belgium., Yadav S; IMEC, Kapeldreef 75, 3001 Leuven, Belgium., Yu H; IMEC, Kapeldreef 75, 3001 Leuven, Belgium., Sibaja-Hernandez A; IMEC, Kapeldreef 75, 3001 Leuven, Belgium., Peralagu U; IMEC, Kapeldreef 75, 3001 Leuven, Belgium., Parvais B; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.; Faculty of Engineering, Vrije Universiteit Brussel, 1050 Ixelles, Belgium., Chasin A; IMEC, Kapeldreef 75, 3001 Leuven, Belgium., Collaert N; IMEC, Kapeldreef 75, 3001 Leuven, Belgium.; Faculty of Engineering, Vrije Universiteit Brussel, 1050 Ixelles, Belgium. |
| Abstrakt: |
For operation as power amplifiers in RF applications, high electron mobility transistor (HEMT) structures are subjected to a range of bias conditions, applied at both the gate and drain terminals, as the device is biased from the OFF- to ON-state conditions. The stability of the device threshold voltage (V t ) condition is imperative from a circuit-design perspective and is the focus of this study, where stresses in both the ON and OFF states are explored. We see rapid positive threshold voltage increases under negative bias stress and subsequent recovery (i.e., V t reduces), whereas conversely, we see a negative V t shift under positive stress and V t increase during the subsequent relaxation phase. These effects are correlated with the thickness of the GaN layer and ultimately result from the deep carbon-acceptor levels in the C-GaN back barrier incorporated to screen the buffer between the silicon substrate and the epitaxially grown GaN layer. Methods to mitigate this effect are explored, and the consequences are discussed. |
