Hexagonal Boron Nitride Based Photonic Quantum Technologies.

Autor: Prasad MK; Joint Quantum Centre (JQC) Durham-Newcastle, School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne NE1 7RU, UK., Taverne MPC; Department of Mathematics, Physics & Electrical Engineering, Northumbria University, Newcastle upon Tyne NE1 8ST, UK.; Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1UB, UK., Huang CC; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK., Mar JD; Joint Quantum Centre (JQC) Durham-Newcastle, School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne NE1 7RU, UK., Ho YD; Department of Mathematics, Physics & Electrical Engineering, Northumbria University, Newcastle upon Tyne NE1 8ST, UK.; Department of Electrical and Electronic Engineering, University of Bristol, Bristol BS8 1UB, UK.
Jazyk: angličtina
Zdroj: Materials (Basel, Switzerland) [Materials (Basel)] 2024 Aug 20; Vol. 17 (16). Date of Electronic Publication: 2024 Aug 20.
DOI: 10.3390/ma17164122
Abstrakt: Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature single-photon emitters. In this review paper we provide an overview of (1) the structure, properties, growth and transfer of hexagonal boron nitride; (2) the creationof colour centres in hexagonal boron nitride and assignment of defects by comparison with ab initio calculations for applications in photonic quantum technologies; and (3) heterostructure devices for the electrical tuning and charge control of colour centres that form the basis for photonic quantum technology devices. The aim of this review is to provide readers a summary of progress in both defect engineering and device fabrication in hexagonal boron nitride based photonic quantum technologies.
Databáze: MEDLINE
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