Integrated Carbon Layer and CoNiP Cocatalyst on SnWO 4 Film for Enhanced Photoelectrochemical Water Splitting.

Autor: Zhang C; School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China., Qiu W; School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China., Li W; School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China., Zhou T; School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China., He G; School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China., Liu C; School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan, 411201, Hunan, China., He W; School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China., Gan L; School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China., Liu J; School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China., Li J; School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China., Wu Q; Information and Network Center, Central South University, Changsha, 410083, China., Liu Y; School of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China.
Jazyk: angličtina
Zdroj: ChemSusChem [ChemSusChem] 2024 Aug 23, pp. e202401337. Date of Electronic Publication: 2024 Aug 23.
DOI: 10.1002/cssc.202401337
Abstrakt: α-SnWO 4 is a promising semiconductor for solar water splitting, however, its performance is limited by weak water oxidation and poor charge transfer. In this study, we employ a vapor deposition method to uniformly implement a carbon layer onto the surface of SnWO 4 coupled with a CoNiP cocatalyst, successfully constructing the integrated CoNiP/C/SnWO 4 film photoanode and alleviating the oxidation of Sn 2+ when loading electrocatalyst. Incorporating the carbon layer enhances the interface charge conduction behavior between the SnWO 4 substrate and the CoNiP cocatalyst, thereby mitigating charge recombination. The synergistic interplay between the carbon layer and CoNiP leads to a remarkable achievement, as evidenced by the photocurrent of 1.72 mA cm -2 (1.23 V vs. RHE) observed for SnWO 4 film measured in 0.2 M potassium phosphate buffer solution. In this work, we demonstrate the viability of tailoring SnWO 4 photoanode and provide valuable insights for prospective advancements in modifying SnWO 4 photoanode.
(© 2024 Wiley-VCH GmbH.)
Databáze: MEDLINE
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