Needle in a haystack: Efficiently finding atomically defined quantum dots for electrostatic force microscopy.

Autor:	Bustamante J; Department of Physics, McGill University, Montréal, Québec H3A 2T8, Canada.; Departamento de Física, Universidad San Francisco de Quito, Quito 170901, Ecuador., Miyahara Y; Department of Physics, McGill University, Montréal, Québec H3A 2T8, Canada.; Department of Physics, Texas State University, San Marcos, Texas 78666, USA.; Materials Science, Engineering and Commercialization Program (MSEC), Texas State University, San Marcos, Texas 78666, USA., Fairgrieve-Park L; Department of Physics, McGill University, Montréal, Québec H3A 2T8, Canada., Spruce K; Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom., See P; National Physical Laboratory, Teddington TW11 0LW, United Kingdom., Curson N; Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom.; London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom., Stock TJZ; Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom.; London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom., Grutter P; Department of Physics, McGill University, Montréal, Québec H3A 2T8, Canada.
Jazyk:	angličtina
Zdroj:	The Review of scientific instruments [Rev Sci Instrum] 2024 Aug 01; Vol. 95 (8).
DOI:	10.1063/5.0208571
Abstrakt:	The ongoing development of single electron, nano-, and atomic scale semiconductor devices would greatly benefit from a characterization tool capable of detecting single electron charging events with high spatial resolution at low temperatures. In this work, we introduce a novel Atomic Force Microscope (AFM) instrument capable of measuring critical device dimensions, surface roughness, electrical surface potential, and ultimately the energy levels of quantum dots and single electron transistors in ultra miniaturized semiconductor devices. The characterization of nanofabricated devices with this type of instrument presents a challenge: finding the device. We, therefore, also present a process to efficiently find a nanometer sized quantum dot buried in a 10 × 10 mm2 silicon sample using a combination of optical positioning, capacitive sensors, and AFM topography in a vacuum. (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)
Databáze:	MEDLINE
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