3D-Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device.

Autor: Wood AA; School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia., McCloskey DJ; School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia., Dontschuk N; School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia., Lozovoi A; CUNY-The City College of New York, New York, 10031, USA., Goldblatt RM; School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia., Delord T; CUNY-The City College of New York, New York, 10031, USA., Broadway DA; School of Science, RMIT University, Melbourne, Victoria, 3000, Australia., Tetienne JP; School of Science, RMIT University, Melbourne, Victoria, 3000, Australia., Johnson BC; School of Science, RMIT University, Melbourne, Victoria, 3000, Australia., Mitchell KT; School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia., Lew CT; School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia., Meriles CA; CUNY-The City College of New York, New York, 10031, USA.; CUNY - The Graduate Center, New York, NY, 10016, USA., Martin AM; School of Physics, University of Melbourne, Parkville, Victoria, 3010, Australia.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Oct; Vol. 36 (40), pp. e2405338. Date of Electronic Publication: 2024 Aug 23.
DOI: 10.1002/adma.202405338
Abstrakt: Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide-bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically-active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin-electric field coupling to measure electronic phenomena. In this work, charge-state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen-vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on-demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide-bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide-bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.
(© 2024 The Author(s). Advanced Materials published by Wiley‐VCH GmbH.)
Databáze: MEDLINE
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