High-Mobility Carriers in Epitaxial IrO 2 Films Grown using Hybrid Molecular Beam Epitaxy.

Autor: Nair S; Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, Minnesota 55455, United States., Yang Z; Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, Minnesota 55455, United States.; School of Physics and Astronomy, University of Minnesota, Twin Cities , Minneapolis, Minnesota 55455, United States., Storr K; Department of Physics, Prairie View A&M University, Prairie View, Texas 77446-0519, United States., Jalan B; Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, Minnesota 55455, United States.
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2024 Sep 04; Vol. 24 (35), pp. 10850-10857. Date of Electronic Publication: 2024 Aug 22.
DOI: 10.1021/acs.nanolett.4c02367
Abstrakt: Binary rutile oxides of 5d metals such as IrO 2 stand out in comparison to their 3d and 4d counterparts due to limited experimental studies, despite rich predicted quantum phenomena. Here, we investigate the electrical transport properties of IrO 2 by engineering epitaxial thin films grown using hybrid molecular beam epitaxy. Our findings reveal phonon-limited carrier transport and thickness-dependent anisotropic in-plane resistance in IrO 2 (110) films, the latter suggesting a complex relationship between strain relaxation and orbital hybridization. Magnetotransport measurements reveal a previously unobserved nonlinear Hall effect. A two-carrier analysis of this effect shows the presence of minority carriers with mobility exceeding 3000 cm 2 /(V s) at 1.8 K. These results point toward emergent properties in 5d metal oxides that can be controlled using dimensionality and epitaxial strain.
Databáze: MEDLINE
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