Thin Ga 2 O 3 Layers by Thermal Oxidation of van der Waals GaSe Nanostructures for Ultraviolet Photon Sensing.

Autor: Cottam ND; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom., Dewes BT; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom., Shiffa M; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom., Cheng TS; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom., Novikov SV; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom., Mellor CJ; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom., Makarovsky O; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom., Gonzalez D; University Research Institute on Electron Microscopy and Materials, IMEYMAT, Universidad de Cadiz, 11510 Cadiz, Spain., Ben T; University Research Institute on Electron Microscopy and Materials, IMEYMAT, Universidad de Cadiz, 11510 Cadiz, Spain., Patanè A; School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.
Jazyk: angličtina
Zdroj: ACS applied nano materials [ACS Appl Nano Mater] 2024 Jul 31; Vol. 7 (15), pp. 17553-17560. Date of Electronic Publication: 2024 Jul 31 (Print Publication: 2024).
DOI: 10.1021/acsanm.4c02685
Abstrakt: Two-dimensional semiconductors (2DSEM) based on van der Waals crystals offer important avenues for nanotechnologies beyond the constraints of Moore's law and traditional semiconductors, such as silicon (Si). However, their application necessitates precise engineering of material properties and scalable manufacturing processes. The ability to oxidize Si to form silicon dioxide (SiO 2 ) was crucial for the adoption of Si in modern technologies. Here, we report on the thermal oxidation of the 2DSEM gallium selenide (GaSe). The nanometer-thick layers are grown by molecular beam epitaxy on transparent sapphire (Al 2 O 3 ) and feature a centro-symmetric polymorph of GaSe. Thermal annealing of the layers in an oxygen-rich environment promotes the chemical transformation and full conversion of GaSe into a thin layer of crystalline Ga 2 O 3 , paralleled by the formation of coherent Ga 2 O 3 /Al 2 O 3 interfaces. Versatile functionalities are demonstrated in photon sensors based on GaSe and Ga 2 O 3 , ranging from electrical insulation to unfiltered deep ultraviolet optoelectronics, unlocking the technological potential of GaSe nanostructures and their amorphous and crystalline oxides.
Competing Interests: The authors declare no competing financial interest.
(© 2024 The Authors. Published by American Chemical Society.)
Databáze: MEDLINE
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