| Autor: |
Baklanov MR; Research and Educational Center 'Technological Center', MIREA-Russian Technological University (RTU MIREA), 119454 Moscow, Russia.; European Centre for Knowledge and Technology Transfer (EUROTEX), 1040 Brussels, Belgium., Gismatulin AA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia., Naumov S; Leibniz Institute of Surface Engineering (IOM), 04318 Leipzig, Germany., Perevalov TV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia., Gritsenko VA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia.; Automation and Computer Engineering Department, Novosibirsk State Technical University, 20 Marks Ave., 630073 Novosibirsk, Russia., Vishnevskiy AS; Research and Educational Center 'Technological Center', MIREA-Russian Technological University (RTU MIREA), 119454 Moscow, Russia., Rakhimova TV; Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (SINP MSU), 119991 Moscow, Russia., Vorotilov KA; Research and Educational Center 'Technological Center', MIREA-Russian Technological University (RTU MIREA), 119454 Moscow, Russia. |
| Abstrakt: |
Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composition, vacuum ultraviolet (VUV) irradiation, and plasma treatment on the electrical properties of these films. Through an extensive survey of literature and experimental findings, we elucidate the intricate interplay between these factors and the resulting alterations in electrical conductivity, dielectric constant, and breakdown strength of OSG films. Key focus areas include the impact of diverse organic moieties incorporated into the silica matrix, the effects of VUV irradiation on film properties, and the modifications induced by various plasma treatment techniques. Furthermore, the underlying mechanisms governing these phenomena are discussed, shedding light on the complex molecular interactions and structural rearrangements occurring within OSG films under different environmental conditions. It is shown that phonon-assisted electron tunneling between adjacent neutral traps provides a more accurate description of charge transport in OSG low- k materials compared to the previously reported Fowler-Nordheim mechanism. Additionally, the quality of low- k materials significantly influences the behavior of leakage currents. Materials retaining residual porogens or adsorbed water on pore walls show electrical conductivity directly correlated with pore surface area and porosity. Conversely, porogen-free materials, developed by Urbanowicz, exhibit leakage currents that are independent of porosity. This underscores the critical importance of considering internal defects such as oxygen-deficient centers (ODC) or similar entities in understanding the electrical properties of these materials. |
