Downscaling of Organic Field-Effect Transistors based on High-Mobility Semiconducting Blends for High-Frequency Operation.

Autor: Losi T; Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Rubattino 81, Milano, 20134, Italy., Viola FA; Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Rubattino 81, Milano, 20134, Italy.; Department of Electrical and Electronic Engineering, University of Cagliari, via Marengo, Cagliari, 09123, Italy., Sala E; Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Rubattino 81, Milano, 20134, Italy.; Department of Energy, Politecnico di Milano, Via Lambruschini 4a, Milan, 20156, Italy., Heeney M; Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK., He Q; Department of Chemistry and Centre for Processable Electronics, Imperial College London, London, W12 0BZ, UK., Kleemann H; Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, Nöthnitzer Straße 61, 01062, Dresden, Germany., Caironi M; Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Rubattino 81, Milano, 20134, Italy.
Jazyk: angličtina
Zdroj: Small methods [Small Methods] 2024 Dec; Vol. 8 (12), pp. e2400546. Date of Electronic Publication: 2024 Aug 06.
DOI: 10.1002/smtd.202400546
Abstrakt: Small molecule/polymer semiconductor blends are promising solutions for the development of high-performing organic electronics. They are able to combine ease in solution processability, thanks to the tunable rheological properties of polymeric inks, with outstanding charge transport properties thanks to high crystalline phases of small molecules. However, because of charge injection issues, so far such good performances are only demonstrated in ad-hoc device architectures, not suited for high-frequency applications, where transistor dimensions require downscaling. Here, the successful integration of the most performing blend reported to date, based on 2,7-dioctyl[1] benzothieno[3,2-b][1]benzothiophene (C 8 -BTBT) and poly(indacenodithiophene-co-benzothiadiazole) (C 16 IDT-BT), in OFETs characterized by channel and overlap lengths equal to 1.3 and 1.9 µm, respectively, is demonstrated, enabling a transition frequency of 23 MHz at -8 V. Two key aspects allowed such result: molecular doping, leading to width-normalized contact resistance of only 260 Ωcm, allowing to retain an apparent field-effect mobility as high as 3 cm 2 /(Vs) in short channel devices, and the implementation of a high capacitance dielectric stack, enabling the reduction of operating voltages below 10 V and the overcoming of self-heating issues. These results represent a fundamental step for the future development of low-cost and high-speed printed electronics for IoT applications.
(© 2024 The Author(s). Small Methods published by Wiley‐VCH GmbH.)
Databáze: MEDLINE
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