Energy-efficient synthetic antiferromagnetic skyrmion-based artificial neuronal device.

Autor:	Verma RS; Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India., Raj RK; Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India., Verma G; Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India., Kaushik BK; Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India.
Jazyk:	angličtina
Zdroj:	Nanotechnology [Nanotechnology] 2024 Aug 12; Vol. 35 (43). Date of Electronic Publication: 2024 Aug 12.
DOI:	10.1088/1361-6528/ad6997
Abstrakt:	Magnetic skyrmions offer unique characteristics such as nanoscale size, particle-like behavior, topological stability, and low depinning current density. These properties make them promising candidates for next-generation spintronics-based memory and neuromorphic computing. However, one of their distinctive features is their tendency to deviate from the direction of the applied driving force that may lead to the skyrmion annihilation at the edge of nanotrack during skyrmion motion, known as the skyrmion Hall effect (SkHE). To overcome this problem, synthetic antiferromagnetic (SAF) skyrmions that having bilayer coupling effect allows them to follow a straight path by nullifying SkHE making them alternative for ferromagnetic (FM) counterpart. This study proposes an integrate-and-fire (IF) artificial neuron model based on SAF skyrmions with asymmetric wedge-shaped nanotrack having self-sustainability of skyrmion numbers at the device window. The model leverages inter-skyrmion repulsion to replicate the IF mechanism of biological neuron. The device threshold, determined by the maximum number of pinned skyrmions at the device window, can be adjusted by tuning the current density applied to the nanotrack. Neuronal spikes occur when initial skyrmion reaches the detection unit after surpassing the device window by the accumulation of repulsive force that result in reduction of the device's contriving current results to design of high energy efficient for neuromorphic computing. Furthermore, work implements a binarized neuronal network accelerator using proposed IF neuron and SAF-SOT-MRAM based synaptic devices for national institute of standards and technology database image classification. The presented approach achieves significantly higher energy efficiency compared to existing technologies like SRAM and STT-MRAM, with improvements of 2.31x and 1.36x, respectively. The presented accelerator achieves 1.42x and 1.07x higher throughput efficiency per Watt as compared to conventional SRAM and STT-MRAM based designs. (© 2024 IOP Publishing Ltd.)
Databáze:	MEDLINE
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