Confinement of excited states in two-dimensional, in-plane, quantum heterostructures.

Autor: Kim G; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.; Department of Engineering Chemistry, Chungbuk National University, Cheongju, 28644, Republic of Korea., Huet B; 2D Crystal Consortium-Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA., Stevens CE; Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Dayton, OH, 45433, USA.; KBR Inc, Beavercreek, OH, 45431, USA., Jo K; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA., Tsai JY; Department of Physics, Northeastern University, Boston, MA, 02115, USA., Bachu S; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA., Leger M; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA., Song S; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA., Rahaman M; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA., Ma KY; Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea., Glavin NR; Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Dayton, OH, 45433, USA., Shin HS; Department of Energy Science and Department of Chemistry, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.; Center for 2D Quantum Heterostructures, Institute of Basic Science (IBS), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea., Alem N; 2D Crystal Consortium-Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA.; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA., Yan Q; Department of Physics, Northeastern University, Boston, MA, 02115, USA., Hendrickson JR; Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, Dayton, OH, 45433, USA., Redwing JM; 2D Crystal Consortium-Materials Innovation Platform, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA.; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA., Jariwala D; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA. dmj@seas.upenn.edu.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2024 Jul 28; Vol. 15 (1), pp. 6361. Date of Electronic Publication: 2024 Jul 28.
DOI: 10.1038/s41467-024-50653-x
Abstrakt: Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe 2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe 2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe 2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe 2 . Finally, single-photon emission (g 2 (0) ~ 0.4) was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.
(© 2024. The Author(s).)
Databáze: MEDLINE
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