Influence of Substrate-Induced Charge Doping on Defect-Related Excitonic Emission in Monolayer MoS 2 .

Autor: Munson KT; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Torsi R; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Mathela S; Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Feidler MA; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Lin YC; Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu City 300, Taiwan., Robinson JA; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Asbury JB; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Jazyk: angličtina
Zdroj: The journal of physical chemistry letters [J Phys Chem Lett] 2024 Aug 08; Vol. 15 (31), pp. 7850-7856. Date of Electronic Publication: 2024 Jul 25.
DOI: 10.1021/acs.jpclett.4c01578
Abstrakt: Many applications of transition metal dichalcogenides (TMDs) involve transfer to functional substrates that can strongly impact their optical and electronic properties. We investigate the impact that substrate interactions have on free carrier densities and defect-related excitonic (X D ) emission from MoS 2 monolayers grown by metal-organic chemical vapor deposition. C-plane sapphire substrates mimic common hydroxyl-terminated substrates. We demonstrate that transferring MoS 2 monolayers to pristine c-plane sapphire dramatically increases the free electron density within MoS 2 layers, quenches X D emission, and accelerates exciton recombination at the optical band edge. In contrast, transferring MoS 2 monolayers onto inert hexagonal boron nitride (h-BN) has no measurable influence on these properties. Our findings demonstrate the promise of utilizing substrate engineering to control charge doping interactions and to quench broad X D background emission features that can influence the purity of single photon emitters in TMDs being developed for quantum photonic applications.
Databáze: MEDLINE
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