Multilevel Conductance States of Vapor-Transport-Deposited Sb 2 S 3 Memristors Achieved via Electrical and Optical Modulation.

Autor: Kundale SS; Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju, Gyeongsangnam-do, 52828, Republic of Korea.; Research Institute for Green Energy Convergence Technology, Gyeongsang National University, Jinju, 52828, Republic of Korea., Pawar PS; Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 61186, Republic of Korea., Kumbhar DD; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India., Devara IKG; Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju, Gyeongsangnam-do, 52828, Republic of Korea., Sharma I; Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 61186, Republic of Korea., Patil PR; Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 61186, Republic of Korea., Lestari WA; Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju, Gyeongsangnam-do, 52828, Republic of Korea., Shim S; Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju, Gyeongsangnam-do, 52828, Republic of Korea., Park J; Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju, Gyeongsangnam-do, 52828, Republic of Korea., Dongale TD; Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India., Nam SY; Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju, Gyeongsangnam-do, 52828, Republic of Korea.; Research Institute for Green Energy Convergence Technology, Gyeongsang National University, Jinju, 52828, Republic of Korea., Heo J; Department of Materials Science and Engineering, and Optoelectronics Convergence Research Center, Chonnam National University, Gwangju, 61186, Republic of Korea., Park JH; Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju, Gyeongsangnam-do, 52828, Republic of Korea.
Jazyk: angličtina
Zdroj: Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2024 Aug; Vol. 11 (32), pp. e2405251. Date of Electronic Publication: 2024 Jul 03.
DOI: 10.1002/advs.202405251
Abstrakt: The pursuit of advanced brain-inspired electronic devices and memory technologies has led to explore novel materials by processing multimodal and multilevel tailored conductive properties as the next generation of semiconductor platforms, due to von Neumann architecture limits. Among such materials, antimony sulfide (Sb 2 S 3 ) thin films exhibit outstanding optical and electronic properties, and therefore, they are ideal for applications such as thin-film solar cells and nonvolatile memory systems. This study investigates the conduction modulation and memory functionalities of Sb 2 S 3 thin films deposited via the vapor transport deposition technique. Experimental results indicate that the Ag/Sb 2 S 3 /Pt device possesses properties suitable for memory applications, including low operational voltages, robust endurance, and reliable switching behavior. Further, the reproducibility and stability of these properties across different device batches validate the reliability of these devices for practical implementation. Moreover, Sb 2 S 3 -based memristors exhibit artificial neuroplasticity with prolonged stability, promising considerable advancements in neuromorphic computing. Leveraging the photosensitivity of Sb 2 S 3 enables the Ag/Sb 2 S 3 /Pt device to exhibit significant low operating potential and conductivity modulation under optical stimulation for memory applications. This research highlights the potential applications of Sb 2 S 3 in future memory devices and optoelectronics and in shaping electronics with versatility.
(© 2024 The Author(s). Advanced Science published by Wiley‐VCH GmbH.)
Databáze: MEDLINE
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