Metal Strip Implanted Tunneling Field-Effect Transistor Biosensor as a Label-Free Biosensor.

Autor: Hussian A; Department of Electronics and Communication Engineering, Jamia Millia Islamia, New Delhi 110025, India., Alkhammash HI; Department of Electrical Engineering, Taif University, 11099, Taif 21944, Saudi Arabia., Wani MS; Department of Electronics and Communication Engineering, Jamia Millia Islamia, New Delhi 110025, India., Loan SA; Department of Electronics and Communication Engineering, Jamia Millia Islamia, New Delhi 110025, India.
Jazyk: angličtina
Zdroj: ACS applied bio materials [ACS Appl Bio Mater] 2024 Jul 15; Vol. 7 (7), pp. 4633-4641. Date of Electronic Publication: 2024 Jun 29.
DOI: 10.1021/acsabm.4c00483
Abstrakt: In this study, we design and simulate a metal implanted dielectrically modulated tunneling field-effect transistor (MI-DMTFET). In the ambipolar conduction state, the proposed structure works as an efficient sensor for the detection of a wide range of biomolecules. A metal strip (MS) is implanted above the drain-channel junction in the gate dielectric to improve the alignment of band gaps. Therefore, with the help of implanted metal work function engineering, the tunneling barrier gets lowered, which in turn increases the ambipolar current. An optimum metal-strip implant work function of 4.85 eV and a length of 1.5 nm have resulted in significantly improved performance of the proposed device. It has been observed that when the biomolecules with varying dielectric constants and charge densities are captured in the nanogap cavity, the ambipolar current of the biosensor changes, resulting in the detection of the biomolecules. Quantitative and comprehensive analyses of device parameters such as surface potential, electric field, band-to-band tunneling, subthreshold slope, and I ON / I OFF ratio analysis have been performed. Rigorous comparative analyses of key performance-measuring parameters have been performed with a conventional sensor device. It has been found that the proposed device offers maximum sensitivity of 1220 under an ambipolar state at k = 12.
Databáze: MEDLINE