Atomically Resolved Defect-Engineering Scattering Potential in 2D Semiconductors.

Autor:	Chen HY; Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan., Hsu HC; Department of Physics, National Taiwan University, Taipei 10617, Taiwan., Liang JY; Department of Physics, National Taiwan University, Taipei 10617, Taiwan., Wu BH; Department of Physics, National Taiwan University, Taipei 10617, Taiwan., Chen YF; Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan., Huang CC; Department of Physics, National Taiwan University, Taipei 10617, Taiwan., Li MY; Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan., Radu IP; Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan., Chiu YP; Graduate School of Advanced Technology, National Taiwan University, Taipei 10617, Taiwan.; Department of Physics, National Taiwan University, Taipei 10617, Taiwan.; Institute of Physics, Academia Sinica, Taipei 115201, Taiwan.; Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106319, Taiwan.
Jazyk:	angličtina
Zdroj:	ACS nano [ACS Nano] 2024 Jul 09; Vol. 18 (27), pp. 17622-17629. Date of Electronic Publication: 2024 Jun 26.
DOI:	10.1021/acsnano.4c02066
Abstrakt:	Engineering atomic-scale defects has become an important strategy for the future application of transition metal dichalcogenide (TMD) materials in next-generation electronic technologies. Thus, providing an atomic understanding of the electron-defect interactions and supporting defect engineering development to improve carrier transport is crucial to future TMDs technologies. In this work, we utilize low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) to elicit how distinct types of defects bring forth scattering potential engineering based on intervalley quantum quasiparticle interference (QPI) in TMDs. Furthermore, quantifying the energy-dependent phase variation of the QPI standing wave reveals the detailed electron-defect interaction between the substitution-induced scattering potential and the carrier transport mechanism. By exploring the intrinsic electronic behavior of atomic-level defects to further understand how defects affect carrier transport in low-dimensional semiconductors, we offer potential technological applications that may contribute to the future expansion of TMDs.
Databáze:	MEDLINE
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