Hot Carrier Nanowire Transistors at the Ballistic Limit.

Autor: Kumar M; NanoLund and Division of Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden., Nowzari A; NanoLund and Division of Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden., Persson AR; NanoLund and Centre for Analysis and Synthesis, Lund University, Box 117, 22100, Lund, Sweden., Jeppesen S; NanoLund and Division of Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden., Wacker A; NanoLund and Division of Mathematical Physics, Lund University, Box 118, 22100 Lund, Sweden., Bastard G; Physics Department ENS-PSL, Laboratoire Pierre Aigrain LPA, 24 Rue Lhomond F75005 Paris, France., Wallenberg RL; NanoLund and Centre for Analysis and Synthesis, Lund University, Box 117, 22100, Lund, Sweden., Capasso F; John A. Paulson School of Engineering and Applied Sciences, Harvard University, 9 Oxford Street McKay Laboratories, Room 125, Cambridge, Massachusetts 02138, United States., Maisi VF; NanoLund and Division of Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden., Samuelson L; NanoLund and Division of Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden.; Institute of Nanoscience and Applications, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen 518055, China.
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2024 Jul 03; Vol. 24 (26), pp. 7948-7952. Date of Electronic Publication: 2024 Jun 24.
DOI: 10.1021/acs.nanolett.4c01197
Abstrakt: We demonstrate experimentally nonequilibrium transport in unipolar quasi-1D hot electron devices reaching the ballistic limit at room temperature. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and the subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electrons passing the barrier depends exponentially on the transport length with a mean-free path of 200-260 nm, and the electrons reach the ballistic transport regime for the shortest devices with 70% of the electrons flying freely through the base electrode and the barrier reflections limiting the transport to the collector.
Databáze: MEDLINE